Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220 IRF1405PBF

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Verpakkingsopties
RS-stocknr.:
543-1099
Fabrikantnummer:
IRF1405PBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

169A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

170nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

330W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

4.83 mm

Height

8.77mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

No

Infineon HEXFET Series MOSFET, 169A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF1405PBF


This MOSFET is intended for various applications, offering strong performance in power management solutions. With its robust specifications and advanced processing techniques, it is a key component in the automation and electronics sectors. Its capability to manage high currents and voltages makes it vital for numerous industrial processes.

Features & Benefits


• Maximum continuous drain current of 169A enhances durability

• Rated for 55V, ensuring operation under high voltage conditions

• Low on-resistance of 5mΩ minimises power loss during operation

• Fast switching capability increases system efficiency

• Features enhancement mode for optimal operation

Applications


• Used in industrial motor drives for efficient control

• Suitable for high-current in power supplies

• Ideal for automation equipment driving motors

• Effective in converters and inverters for renewable energy systems

What is the maximum gate-to-source voltage limit?


The maximum gate-to-source voltage is ±20V, ensuring safe operation.

How does this device handle thermal management?


It operates effectively up to 175°C, providing reliability in high-temperature conditions.

What factors should be considered during installation?


Ensure proper mounting torque and account for the thermal resistance of the heatsink to maintain efficient performance.

Can it be used in switching applications?


Yes, it features fast switching capabilities appropriate for high-speed applications, reducing response time.

What gate charge values can be expected during operation?


The typical gate charge is 170nC at 10V, facilitating quick turn-on and turn-off times.

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