Vishay Si1302DL Type N-Channel MOSFET, 600 mA, 30 V Enhancement, 3-Pin SC-70 SI1302DL-T1-E3
- RS-stocknr.:
- 655-6795
- Fabrikantnummer:
- SI1302DL-T1-E3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 3,82
(excl. BTW)
€ 4,62
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- 1.040 stuk(s) klaar voor verzending vanaf een andere locatie
- Laatste verzending 2.350 stuk(s) vanaf 10 juni 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,382 | € 3,82 |
| 100 - 490 | € 0,287 | € 2,87 |
| 500 - 990 | € 0,268 | € 2,68 |
| 1000 - 2490 | € 0,21 | € 2,10 |
| 2500 + | € 0,18 | € 1,80 |
*prijsindicatie
- RS-stocknr.:
- 655-6795
- Fabrikantnummer:
- SI1302DL-T1-E3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-70 | |
| Series | Si1302DL | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 480mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 280mW | |
| Typical Gate Charge Qg @ Vgs | 0.86nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-70 | ||
Series Si1302DL | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 480mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 280mW | ||
Typical Gate Charge Qg @ Vgs 0.86nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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