Infineon HEXFET N-Channel MOSFET Transistor, 93 A, 20 V, 3-Pin IPAK IRFU3711ZPBF
- RS-stocknr.:
- 688-7140
- Fabrikantnummer:
- IRFU3711ZPBF
- Fabrikant:
- Infineon
Afbeelding representeert productcategorie
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 2,32
(excl. BTW)
€ 2,805
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 0,464 | € 2,32 |
| 25 - 45 | € 0,452 | € 2,26 |
| 50 - 95 | € 0,44 | € 2,20 |
| 100 - 245 | € 0,428 | € 2,14 |
| 250 + | € 0,412 | € 2,06 |
*prijsindicatie
- RS-stocknr.:
- 688-7140
- Fabrikantnummer:
- IRFU3711ZPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 93 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | IPAK | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.45V | |
| Minimum Gate Threshold Voltage | 1.55V | |
| Maximum Power Dissipation | 79 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 18 nC @ 4.5 V | |
| Width | 2.3mm | |
| Length | 6.6mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Height | 6.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 93 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type IPAK | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.45V | ||
Minimum Gate Threshold Voltage 1.55V | ||
Maximum Power Dissipation 79 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 18 nC @ 4.5 V | ||
Width 2.3mm | ||
Length 6.6mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 6.1mm | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- MX
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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