Infineon HEXFET Type N-Channel MOSFET, 75 A, 55 V Enhancement, 3-Pin TO-220 IRF2805PBF

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RS-stocknr.:
784-0274
Artikelnummer Distrelec:
303-41-270
Fabrikantnummer:
IRF2805PBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

330W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

150nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

16.51mm

Standards/Approvals

No

Length

10.67mm

Width

4.83 mm

Distrelec Product Id

30341270

Automotive Standard

No

Infineon HEXFET Series MOSFET, 75A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF2805PBF


This power MOSFET delivers excellent performance for various electronic applications. Its robust specifications are designed for industrial environments, ensuring both reliability and efficiency. With low on-resistance, this component supports high current capability, making it suitable for advanced circuits.

Features & Benefits


• Supports a maximum continuous drain current of 75A

• Enhances efficiency with a low RDS(on) of 4.7mΩ

• Compatible with +20 V/-20 V gate-source voltage for improved flexibility

• Capable of fast switching speeds to meet dynamic performance needs

• Supports repetitive avalanche handling for operational resilience

Applications


• Used in industrial motor drives for effective power control

• Suitable for power management in automation systems

• Employed in renewable energy systems for efficient switching

• Utilised in high-performance and durable power tools

• Applicable in battery management systems for electric vehicles

What is the maximum temperature this component can withstand?


It can operate within a temperature range of -55°C to +175°C for performance in extreme conditions.

How does this MOSFET handle high current applications?


It is designed to manage a continuous drain current of 75A, making it suitable for high current demands.

Can it be used in applications with fast switching requirements?


Yes, this MOSFET supports fast switching speeds, ideal for applications requiring dynamic performance.

Is this device suitable for use in power inverters?


Yes, its thermal stability and capacity for high current handling make it appropriate for power inverter applications in renewable energy systems.

What are the implications of its low on-resistance?


The low RDS(on) reduces power losses during operation, contributing to improved efficiency and thermal performance.

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