Infineon SIPMOS Type P-Channel MOSFET, 1.17 A, 60 V Enhancement, 4-Pin SOT-223 BSP315PH6327XTSA1
- RS-stocknr.:
- 826-9238
- Artikelnummer Distrelec:
- 304-44-415
- Fabrikantnummer:
- BSP315PH6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 50 eenheden)*
€ 23,25
(excl. BTW)
€ 28,15
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
- Verzending 9.650 stuk(s) vanaf 02 november 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 + | € 0,465 | € 23,25 |
*prijsindicatie
- RS-stocknr.:
- 826-9238
- Artikelnummer Distrelec:
- 304-44-415
- Fabrikantnummer:
- BSP315PH6327XTSA1
- Fabrikant:
- Infineon
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.17A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Forward Voltage Vf | -0.97V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Width | 3.5mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.17A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Forward Voltage Vf -0.97V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.6mm | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Width 3.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP315PH6327XTSA1
Features and Benefits:
• 1.17A continuous drain current for small-signal power delivery
• 800 mΩ maximum RDS(on) for reduced conduction losses
• 5.2 nC typical gate charge for efficient gate drive
• 1.8W power dissipation enabling sustained low-power operation
• AEC‑Q101 qualification for automotive-grade stress tolerance
Applications
• Ideal for reverse-polarity protection in automotive electronics
• Used with low-power DC/DC converters for high-side switching
• Can be used for load disconnect in telematics modules
• Suitable for compact power-control boards requiring surface mount
What temperature range can it operate within?
Which package and mounting method does it use?
How many pins are available for circuit connections?
What maximum gate voltage should be observed during use?
Gerelateerde Links
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 BSP315PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 BSP613PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 BSP92PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 BSP317PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 BSP322PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 BSP170PH6327XTSA1
