Infineon HEXFET Type N-Channel MOSFET, 9.4 A, 100 V Enhancement, 3-Pin TO-252 IRFR120NTRLPBF

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€ 14,36

(excl. BTW)

€ 17,38

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  • Laatste verzending 360 stuk(s) vanaf 05 januari 2026
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20 - 180€ 0,718€ 14,36
200 - 480€ 0,56€ 11,20
500 - 980€ 0,524€ 10,48
1000 - 1980€ 0,488€ 9,76
2000 +€ 0,452€ 9,04

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Verpakkingsopties
RS-stocknr.:
827-4035
Fabrikantnummer:
IRFR120NTRLPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9.4A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

48W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

Lead-Free

Height

2.39mm

Width

6.22 mm

Automotive Standard

No

Land van herkomst:
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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