Infineon OptiMOS 3 N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-262

RS-stocknr.:: 892-2166
Fabrikantnummer:: IPI086N10N3GXKSA1
Fabrikant:: Infineon

Infineon OptiMOS 3 N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-262

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€ 10,92

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€ 13,22

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RS-stocknr.:: 892-2166
Fabrikantnummer:: IPI086N10N3GXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	100V
	Series	OptiMOS 3
	Package Type	TO-262
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	15.4mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	125W
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	42nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	10.36mm
	Standards/Approvals	No
	Height	11.177mm
	Width	4.57mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 100V
	Series OptiMOS 3
	Package Type TO-262
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 15.4mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 125W
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 42nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 10.36mm
	Standards/Approvals No
	Height 11.177mm
	Width 4.57mm
	Automotive Standard No

Infineon OptiMOS™ 3 Series MOSFET, 80A Maximum Continuous Drain Current, 125W Maximum Power Dissipation - IPI086N10N3GXKSA1

This MOSFET is designed for high-efficiency power management applications and is suitable for various sectors, including automation and electronics. With a continuous drain current of 80A and a maximum drain-source voltage of 100V, it offers a dependable and efficient solution for electronic systems.

Features & Benefits

• N-channel design optimises electrical performance

• Low RDS(on) reduces power losses

• High power dissipation capability accommodates intensive applications

• Enhanced gate threshold improves switching efficiency

• Through hole mounting allows easy integration into circuits

Applications

• Used for high-frequency switching in power supplies

• Facilitates synchronous rectification in converter circuits

• Suitable for industrial automation systems requiring efficient power control

• Applied in various electronic devices for enhanced energy efficiency

• Appropriate for automotive requiring consistent performance

What is the significance of the low RDS(on) in this device?

The low RDS(on) value minimises energy losses during switching, increasing overall system performance.

How does the MOSFET handle high temperatures?

It is designed to function at temperatures up to 175°C, ensuring consistent performance even in challenging environmental conditions.

What mounting type does this component require?

It features a through hole mounting design that facilitates straightforward integration into existing PCB layouts.

Is it suitable for use in synchronous rectification?

Yes, it is specifically designed for efficient synchronous rectification in power electronics, promoting overall energy savings.

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.