Vishay IRF740LC Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740LCPBF

RS-stocknr.:: 919-4485
Fabrikantnummer:: IRF740LCPBF
Fabrikant:: Vishay

Vishay IRF740LC Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740LCPBF

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Subtotaal (1 tube van 50 eenheden)*

€ 64,25

(excl. BTW)

€ 77,75

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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2.450 stuk(s) klaar voor verzending vanaf een andere locatie

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,285	€ 64,25
100 - 200	€ 1,131	€ 56,55
250 +	€ 0,951	€ 47,55

*prijsindicatie

RS-stocknr.:: 919-4485
Fabrikantnummer:: IRF740LCPBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-220AB
	Series	IRF740LC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	550mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	39nC
	Maximum Power Dissipation Pd	125W
	Forward Voltage Vf	2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Width	4.7mm
	Standards/Approvals	RoHS
	Length	10.41mm
	Height	9.01mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-220AB
	Series IRF740LC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 550mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 39nC
	Maximum Power Dissipation Pd 125W
	Forward Voltage Vf 2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Width 4.7mm
	Standards/Approvals RoHS
	Length 10.41mm
	Height 9.01mm
	Automotive Standard No

Land van herkomst:: PH

Vishay IRF740LC Series Power MOSFET, 400V Drain Source Voltage, 10A Continuous Drain Current - IRF740LCPBF

This power MOSFET is a high-voltage switching device designed for industrial and electronic control environments. It operates as an N-channel enhancement-mode transistor capable of handling elevated drain-to-source voltages and moderate continuous currents, making it suitable for power conversion and switch-mode circuits in automation and electrical systems. The device is supplied in a through-hole TO-220AB package for straightforward mounting and thermal interfacing.

Features and Benefits:

• 400V maximum drain voltage delivers high-voltage switching capability • 10A continuous drain current supports moderate load currents • 125W maximum power dissipation enables higher thermal throughput • 550mΩ Rds(on) minimises conduction losses under load • 39nC typical gate charge allows predictable switching energy • ±30V gate tolerance protects gate from excessive drive excursions

Applications

• Suitable for switch-mode power supplies in industrial controllers • Ideal for inverter stages in motor drive units • Used for high-voltage relay and contactor replacement circuits • Can be used for lighting ballast and power factor correction modules • Used with discrete driver stages in prototyping and repair

What temperature range can it operate within?

It functions across a wide thermal span from -55°C up to 150°C, permitting use in harsh ambient conditions and elevated junction scenarios.

How is the component mounted and cooled in typical assemblies?

It uses a through-hole TO-220AB format that allows screw or clip mounting to heatsinks for enhanced thermal dissipation and mechanical stability.

What gate-drive considerations should be observed?

The gate may be driven up to ±30V

designers should limit Peak drive pulses and account for the 39nC gate charge to size driver current and switching transition times.

Are there approvals or restrictions noted for regulatory compliance?

The device meets RoHS requirements, indicating it adheres to restrictions on certain hazardous substances for electronic components.