Infineon HEXFET Type P-Channel MOSFET, 40 A, 100 V Enhancement, 3-Pin TO-220

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€ 81,40

(excl. BTW)

€ 98,50

(incl. BTW)

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  • Verzending 1.000 stuk(s) vanaf 26 februari 2026
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50 - 50€ 1,628€ 81,40
100 - 200€ 1,384€ 69,20
250 +€ 1,221€ 61,05

*prijsindicatie

RS-stocknr.:
919-4915
Fabrikantnummer:
IRF5210PBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.6V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

180nC

Maximum Power Dissipation Pd

200W

Maximum Operating Temperature

175°C

Width

4.69 mm

Standards/Approvals

No

Length

10.54mm

Height

8.77mm

Automotive Standard

No

Land van herkomst:
CN

Infineon HEXFET Series MOSFET, 40A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF5210PBF


This MOSFET is designed for various electrical and electronic applications. It is optimised for high efficiency, supporting automation and control systems where effective power management is crucial. Its robust specifications enable precise circuit control, ensuring reliability and efficiency in challenging environments.

Features & Benefits


• 40A continuous drain current accommodates high-power applications

• 100V maximum drain-source voltage provides operational versatility

• P-channel design simplifies circuit configuration

• Enhancement mode functionality facilitates efficient power management

• High maximum power dissipation capability enhances thermal performance

Applications


• Power switching in industrial automation

• DC-DC converters for efficient power supply

• Motor control circuits for precision

• Peak power handling scenarios in electronics

What is the maximum operating temperature for this component?


The component can operate at a maximum temperature of +175°C, making it suitable for high-temperature applications.

How does the low on-resistance benefit circuit performance?


The low on-resistance results in reduced power losses, leading to enhanced energy efficiency and improved thermal management.

Is this suitable for applications in automotive systems?


Yes, its robust specifications and thermal characteristics make it suitable for automotive applications where reliability is essential.

What kind of circuit configurations can it be integrated into?


This component integrates seamlessly into various configurations, including single and parallel arrangements, allowing for design flexibility.

How should it be installed to ensure optimal performance?


Ensure proper thermal contact with a heatsink, and adhere to recommended PCB layout guidelines to enhance performance and reliability.

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