Infineon HEXFET Type P-Channel MOSFET, 14 A, 100 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 919-4860
Fabrikantnummer:: IRF9530NPBF
Fabrikant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 14 A, 100 V Enhancement, 3-Pin TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 33,40

(excl. BTW)

€ 40,40

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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450 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 12.700 stuk(s) vanaf 01 september 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,668	€ 33,40
100 - 200	€ 0,635	€ 31,75
250 - 450	€ 0,608	€ 30,40
500 - 1200	€ 0,568	€ 28,40
1250 +	€ 0,535	€ 26,75

*prijsindicatie

RS-stocknr.:: 919-4860
Fabrikantnummer:: IRF9530NPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	200mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.6V
	Maximum Power Dissipation Pd	79W
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	58nC
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Width	4.69mm
	Standards/Approvals	No
	Length	10.54mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 200mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.6V
	Maximum Power Dissipation Pd 79W
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 58nC
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Width 4.69mm
	Standards/Approvals No
	Length 10.54mm
	Automotive Standard No

Land van herkomst:: CN

Infineon HEXFET Series MOSFET, 14A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IRF9530NPBF

This MOSFET is designed for high-efficiency applications in the automation, electronics, and electrical sectors. Its P-channel configuration enhances switching performance, making it vital for power management systems. The device operates effectively in various environments, delivering consistent performance under challenging conditions, making it an important component for engineers and designers seeking durability and efficiency.

Features & Benefits

• Maximum continuous drain current of 14A for robust performance

• Compatible with drain-source voltages of up to 100V for versatility

• Low on-resistance of 200mΩ enhances power efficiency

• TO-220AB package design facilitates easy mounting and heat dissipation

• Enhancement mode operation ensures dependable switching performance

• High gate threshold voltage of 4V allows for effective control

Applications

• Suitable for integration into power supply circuits

• Utilised in motor control systems for improved efficiency

• Applicable in power converters for enhanced energy management

• Ideal for power switching in electronic devices

• Employed in high current driver circuits for dependability

How can the operating temperature range affect usage?

The device operates effectively between -55°C and +175°C, enabling functionality in extreme conditions without compromising performance.

What are the implications of the maximum power dissipation specification?

With a maximum power dissipation of 79W, the component can manage substantial load demands, ensuring stable operation and longevity in high-performance settings.

Can it be used in parallel configurations for increased current capacity?

Yes, it can be arranged in parallel to distribute current loads effectively, provided that thermal management is suitably addressed.

What precautions should be taken during installation?

Proper heat sinking is essential to prevent overheating; it is important to ensure that thermal resistance aligns with the system's specifications for long-term reliability.

How does device selection impact overall circuit performance?

Choosing the appropriate specifications improves circuit efficiency, reducing power losses and enhancing overall system performance, especially in high-demand applications.