BGA855N6E6327XTSA1 Infineon RF Amplifier Low Noise 17.8 dB, 6-Pin 1300MHz TSNP

RS-stocknr.:: 258-0667
Fabrikantnummer:: BGA855N6E6327XTSA1
Fabrikant:: Infineon

BGA855N6E6327XTSA1 Infineon RF Amplifier Low Noise 17.8 dB, 6-Pin 1300MHz TSNP

Subtotaal (1 rol van 12000 eenheden)*

€ 2.964,00

(excl. BTW)

€ 3.588,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 26 april 2027

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Aantal stuks	Per stuk	Per rol*
12000 +	€ 0,247	€ 2.964,00

*prijsindicatie

RS-stocknr.:: 258-0667
Fabrikantnummer:: BGA855N6E6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	RF Amplifier
	Amplifier Type	Low Noise
	Operating Frequency	1300MHz
	Technology	Silicon Germanium
	Gain	17.8dB
	Mount Type	Surface
	Package Type	TSNP
	Minimum Supply Voltage	1.1V
	Maximum Supply Voltage	3.3V
	Pin Count	6
	Minimum Operating Temperature	-40°C
	Noise Figure	1.1dB
	P1dB - Compression Point	60mW
	Third Order Intercept OIP3	0dBm
	Maximum Operating Temperature	85°C
	Standards/Approvals	JEDEC47/20/22
	Series	BGA855N6
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type RF Amplifier
	Amplifier Type Low Noise
	Operating Frequency 1300MHz
	Technology Silicon Germanium
	Gain 17.8dB
	Mount Type Surface
	Package Type TSNP
	Minimum Supply Voltage 1.1V
	Maximum Supply Voltage 3.3V
	Pin Count 6
	Minimum Operating Temperature -40°C
	Noise Figure 1.1dB
	P1dB - Compression Point 60mW
	Third Order Intercept OIP3 0dBm
	Maximum Operating Temperature 85°C
	Standards/Approvals JEDEC47/20/22
	Series BGA855N6
	Automotive Standard No

Datasheet - BGA855N6E6327XTSA1

Infineon BGA855N6 Series RF Amplifier, 0.60dB Noise Figure, 17.8dB Gain - BGA855N6E6327XTSA1

This RF amplifier is a silicon-germanium low-noise amplifier designed for single-frequency RF stages operating at 1300MHz. It is a surface-mount device supplied in a TSNP package and intended for systems requiring low-voltage operation and Compact board integration. The device functions across a wide temperature range and conforms to JEDEC47 mechanical standards for reliability in assembly and handling.

Features and Benefits:

• 0.60dB noise figure for improved weak-signal reception
• 17.8dB gain to increase signal amplitude with low distortion
• 1.1 to 3.3V supply range for low-voltage system compatibility
• P1dB 60 mW output compression point to maintain linearity under drive
• OIP3 0 dBm for third-order intermodulation characterisation

Applications

• Suitable for single-frequency receiver front-ends
• Ideal for short-range RF communication modules
• Used with Compact surface-mount transceiver assemblies
• Can be used for low-power wireless test platforms
• Suitable for laboratory evaluation of SiGe amplifier stages

What supply voltages are required for operation?

It operates from a minimum of 1.1V up to a maximum of 3.3V.

What thermal conditions can it tolerate during use?

The device is rated from -40 to 85°C for operating environments.

What package and mounting method does it use?

It is supplied in a TSNP package intended for surface mounting.

How many electrical connections does the device provide?

The component has a pin count of 6 for PCB interfacing.