STMicroelectronics 1.2 kV 20 A Diode Schottky 8-Pin HU3PAK STPSC20G12L2Y
- RS-stocknr.:
- 365-182
- Fabrikantnummer:
- STPSC20G12L2Y
- Fabrikant:
- STMicroelectronics
Subtotaal (1 rol van 600 eenheden)*
€ 5.143,80
(excl. BTW)
€ 6.223,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 24 mei 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 600 + | € 8,573 | € 5.143,80 |
*prijsindicatie
- RS-stocknr.:
- 365-182
- Fabrikantnummer:
- STPSC20G12L2Y
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | HU3PAK | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Series | STPS | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 8 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1.1kA | |
| Peak Reverse Current Ir | 500μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type HU3PAK | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Series STPS | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 8 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1.1kA | ||
Peak Reverse Current Ir 500μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- JP
The STMicroelectronics SiC diode is a ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turnoff behavior is independent of temperature. Based on the latest technology optimization, this diode has an improved forward surge current capability, making it Ideal for use in PFC, where this ST SiC diode will boost the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.
AEC-Q101 qualified and PPAP capable
None or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
ECOPACK2 compliant component
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