STMicroelectronics 1200 V 20 A Diode Schottky 8-Pin HU3PAK
- RS-stocknr.:
- 365-184
- Fabrikantnummer:
- STPSC20G12L2Y
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
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€ 15,70
(excl. BTW)
€ 19,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Plus verzending 498 stuk(s) vanaf 12 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 15,70 |
| 10 - 99 | € 14,12 |
| 100 + | € 13,03 |
*prijsindicatie
- RS-stocknr.:
- 365-184
- Fabrikantnummer:
- STPSC20G12L2Y
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | HU3PAK | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | STPS | |
| Rectifier Type | Schottky | |
| Pin Count | 8 | |
| Maximum Forward Voltage Vf | 2.1V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 500μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1100A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type HU3PAK | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series STPS | ||
Rectifier Type Schottky | ||
Pin Count 8 | ||
Maximum Forward Voltage Vf 2.1V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 500μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1100A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- JP
The STMicroelectronics SiC diode is a ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turnoff behavior is independent of temperature. Based on the latest technology optimization, this diode has an improved forward surge current capability, making it Ideal for use in PFC, where this ST SiC diode will boost the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.
AEC-Q101 qualified and PPAP capable
None or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
ECOPACK2 compliant component
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