Infineon 1.2 kV 30 A SiC Diode Schottky 2-Pin TO-247 IDWD30G120C5XKSA1

RS-stocknr.:: 222-4843
Fabrikantnummer:: IDWD30G120C5XKSA1
Fabrikant:: Infineon

Infineon 1.2 kV 30 A SiC Diode Schottky 2-Pin TO-247 IDWD30G120C5XKSA1

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Subtotaal (1 tube van 30 eenheden)*

€ 227,52

(excl. BTW)

€ 275,31

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending 240 stuk(s) vanaf 14 oktober 2027

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Aantal stuks	Per stuk	Per tube*
30 - 30	€ 7,584	€ 227,52
60 - 60	€ 7,205	€ 216,15
90 +	€ 6,75	€ 202,50

*prijsindicatie

RS-stocknr.:: 222-4843
Fabrikantnummer:: IDWD30G120C5XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	SiC Diode
	Mount Type	SMD
	Package Type	TO-247
	Maximum Continuous Forward Current If	30A
	Peak Reverse Repetitive Voltage Vrrm	1.2kV
	Series	5th Generation CoolSiC 1200V Schottky Diode
	Diode Configuration	Single
	Rectifier Type	Schottky
	Pin Count	2
	Peak Non-Repetitive Forward Surge Current Ifsm	240A
	Maximum Forward Voltage Vf	1.65V
	Peak Reverse Current Ir	248μA
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	40.21mm
	Width	15.8mm
	Standards/Approvals	JEDEC47/20/22
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type SiC Diode
	Mount Type SMD
	Package Type TO-247
	Maximum Continuous Forward Current If 30A
	Peak Reverse Repetitive Voltage Vrrm 1.2kV
	Series 5th Generation CoolSiC 1200V Schottky Diode
	Diode Configuration Single
	Rectifier Type Schottky
	Pin Count 2
	Peak Non-Repetitive Forward Surge Current Ifsm 240A
	Maximum Forward Voltage Vf 1.65V
	Peak Reverse Current Ir 248μA
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 40.21mm
	Width 15.8mm
	Standards/Approvals JEDEC47/20/22
	Automotive Standard No

Datasheet - IDWD30G120C5XKSA1

Infineon 5th Generation CoolSiC 1200V Schottky Diode Series SiC Diode, 30A Continuous Forward Current, 1200V Peak Reverse Repetitive Voltage - IDWD30G120C5XKSA1

This SiC Schottky diode is a high-voltage rectifier designed for power-conversion environments requiring fast switching and elevated temperature endurance. It operates across a wide ambient range and is supplied in a TO-247 surface-mount package suited to heat-sinking and power-system assembly. The component is intended for use where low forward drop, Rapid recovery and robust surge capability are required.

Features and Benefits:

• 30A continuous forward current reduces heat-related conduction losses
• 1.65V maximum forward voltage lowers conduction power dissipation
• 240A Peak surge capability protects against transient overloads
• 1200V Peak reverse rating enables high-voltage rectification
• 248μA Peak reverse leakage minimises standby reverse losses

Applications

• Suitable for 1200V SiC rectifier for power electronics
• Ideal for high-temperature switching up to 175°C
• Used with power modules requiring TO-247 SiC diode high temperature 175°C
• Can be used for designs needing 1200V SiC rectifier diode Ifsm 240A
• Suitable for circuits demanding SiC Schottky 30A 1.65V forward

What temperature range can it operate within?

It is rated to function from -55°C up to 175°C.

How many electrical connections does the device provide?

It features a two-pin configuration for single-diode use.

What package and mounting method does it use?

The device is supplied in a TO-247 package intended for surface mounting.

What standard approvals does the component meet?

It conforms to JEDEC47/20/22 standards.

What is the Peak non-repetitive forward surge capability?

It supports a 240A Peak non-repetitive forward surge current.