Infineon BFP842ESDH6327XTSA1 RF Bipolar Transistor, 40 mA NPN, 3.25 V, 4-Pin SOT-343
- RS-stocknr.:
- 170-2366
- Fabrikantnummer:
- BFP842ESDH6327XTSA1
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 170-2366
- Fabrikantnummer:
- BFP842ESDH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 3.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 4.1V | |
| Maximum Transition Frequency ft | 57GHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 4.1V | |
| Maximum Power Dissipation Pd | 120mW | |
| Transistor Polarity | NPN | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.1mm | |
| Height | 1.3mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Width | 1.25mm | |
| Series | BFP842ESD | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 3.25V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 4.1V | ||
Maximum Transition Frequency ft 57GHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 4.1V | ||
Maximum Power Dissipation Pd 120mW | ||
Transistor Polarity NPN | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Length 2.1mm | ||
Height 1.3mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Width 1.25mm | ||
Series BFP842ESD | ||
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application.
Robust very low noise amplifier based on Infineon's reliable, high volume
SiGe:C technology
Unique combination of high end RF performance and robustness
High linearity
High transition frequency
Transducer gain
Ideal for low voltage applications
Low power consumption, ideal for mobile applications
Easy to use Pb free and halogen free industry standard package with visible leads
Gerelateerde Links
- Infineon BFP842ESDH6327XTSA1 Bipolar Transistor 3.7 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 10 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 4.5 V, 4-Pin SOT-343
- Infineon BFP183WH6327XTSA1 NPN RF Bipolar Transistor 12 V, 4-Pin SOT-343
- Infineon BFP193WH6327XTSA1 RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon BFP196WH6327XTSA1 RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon BFP540FESDH6327XTSA1 RF Bipolar Transistor 10 V, 4-Pin SOT-343