STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface

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€ 1.342,20

(excl. BTW)

€ 1.624,20

(incl. BTW)

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  • Verzending vanaf 25 september 2026
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600 +€ 2,237€ 1.342,20

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RS-stocknr.:
285-637
Fabrikantnummer:
STGHU30M65DF2AG
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

84A

Maximum Collector Emitter Voltage Vceo

650V

Number of Transistors

1

Maximum Power Dissipation Pd

441W

Package Type

HU3PAK

Configuration

Dual Gate

Mount Type

Surface

Pin Count

7

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Length

11.9mm

Height

3.6mm

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

This STMicroelectronics device is an IGBT developed using an Advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C

6 μs of minimum short circuit withstand time

Tight parameter distribution

Safer paralleling

Low thermal resistance

Soft and very fast recovery antiparallel diode

Excellent switching performance thanks to the extra driving kelvin pin

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