STMicroelectronics STGHU30M65DF2AG Dual Gate IGBT, 84 A 650 V, 7-Pin HU3PAK, Surface

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RS-stocknr.:
285-638
Fabrikantnummer:
STGHU30M65DF2AG
Fabrikant:
STMicroelectronics
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STMicroelectronics

Maximum Continuous Collector Current Ic

84A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

441W

Number of Transistors

1

Configuration

Dual Gate

Package Type

HU3PAK

Mount Type

Surface

Pin Count

7

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

3.6mm

Width

14.1 mm

Length

11.9mm

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

This STMicroelectronics device is an IGBT developed using an Advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C

6 μs of minimum short circuit withstand time

Tight parameter distribution

Safer paralleling

Low thermal resistance

Soft and very fast recovery antiparallel diode

Excellent switching performance thanks to the extra driving kelvin pin

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