STMicroelectronics, Type N-Channel Trench Gate Field Stop IGBT, 40 A 650 V, 3-Pin TO, Through Hole

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Subtotaal (1 tube van 30 eenheden)*

€ 55,44

(excl. BTW)

€ 67,08

(incl. BTW)

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  • Verzending vanaf 21 juli 2026
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Aantal stuks
Per stuk
Per tube*
30 - 90€ 1,848€ 55,44
120 - 240€ 1,798€ 53,94
270 - 480€ 1,75€ 52,50
510 - 990€ 1,706€ 51,18
1020 +€ 1,663€ 49,89

*prijsindicatie

RS-stocknr.:
192-4655
Fabrikantnummer:
STGWT20H65FB
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Maximum Continuous Collector Current Ic

40A

Product Type

Trench Gate Field Stop IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

168W

Package Type

TO

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Series

HB

Standards/Approvals

RoHS

Automotive Standard

No

Land van herkomst:
KR
These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature: TJ= 175 °C

High speed switching series

Minimized tail current

VCE(sat)= 1.55 V (typ.) @ IC= 20 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Lead free package

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