STMicroelectronics, Type N-Channel Trench Gate Field Stop IGBT, 60 A 600 V, 3-Pin TO-3PF, Through Hole

Bekijk alle IGBTs
Bulkkorting beschikbaar

Subtotaal (1 tube van 30 eenheden)*

€ 66,60

(excl. BTW)

€ 80,70

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Laatste voorraad RS
  • Laatste 30 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks
Per stuk
Per tube*
30 - 30€ 2,22€ 66,60
60 - 120€ 2,109€ 63,27
150 - 270€ 1,898€ 56,94
300 +€ 1,887€ 56,61

*prijsindicatie

RS-stocknr.:
168-7090
Fabrikantnummer:
STGFW30V60DF
Fabrikant:
STMicroelectronics
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

STMicroelectronics

Product Type

Trench Gate Field Stop IGBT

Maximum Continuous Collector Current Ic

60A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

260W

Package Type

TO-3PF

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

ECOPACK

Height

26.7mm

Length

15.7mm

Series

V

Width

5.7 mm

Automotive Standard

No

Land van herkomst:
KR

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Gerelateerde Links