STMicroelectronics, Type N-Channel Trench Gate Field Stop IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole

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Subtotaal (1 tube van 30 eenheden)*

€ 63,06

(excl. BTW)

€ 76,29

(incl. BTW)

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  • Plus verzending 60 stuk(s) vanaf 16 maart 2026
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30 - 30€ 2,102€ 63,06
60 - 120€ 2,047€ 61,41
150 +€ 1,997€ 59,91

*prijsindicatie

RS-stocknr.:
168-8808
Fabrikantnummer:
STGW30H60DFB
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

Trench Gate Field Stop IGBT

Maximum Continuous Collector Current Ic

30A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

260W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

HB

Width

5.15 mm

Length

15.75mm

Height

20.15mm

Automotive Standard

No

Land van herkomst:
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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