Infineon FP10R12W1T4BOMA1 IGBT Module 1200 V

RS-stocknr.:: 244-5383
Fabrikantnummer:: FP10R12W1T4BOMA1
Fabrikant:: Infineon

Infineon FP10R12W1T4BOMA1 IGBT Module 1200 V

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Subtotaal (1 tray van 24 eenheden)*

€ 466,32

(excl. BTW)

€ 564,24

(incl. BTW)

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Verzending vanaf 19 februari 2027

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Aantal stuks	Per stuk	Per tray*
24 - 24	€ 19,43	€ 466,32
48 +	€ 18,458	€ 442,99

*prijsindicatie

RS-stocknr.:: 244-5383
Fabrikantnummer:: FP10R12W1T4BOMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Number of Transistors	7
	Maximum Power Dissipation Pd	105W
	Maximum Collector Emitter Saturation Voltage VceSAT	2.25V
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	150°C
	Series	FP10R12W1T4B
	Standards/Approvals	RoHS
	Length	62.8mm
	Width	33.8mm
	Height	12mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Number of Transistors 7
	Maximum Power Dissipation Pd 105W
	Maximum Collector Emitter Saturation Voltage VceSAT 2.25V
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 150°C
	Series FP10R12W1T4B
	Standards/Approvals RoHS
	Length 62.8mm
	Width 33.8mm
	Height 12mm
	Automotive Standard No

Datasheet - FP10R12W1T4BOMA1

Infineon FP10R12W1T4B Series IGBT Module, 1200V Maximum Collector-Emitter Voltage, 105W Maximum Power Dissipation - FP10R12W1T4BOMA1

This IGBT module is a high-voltage semiconductor assembly designed to switch and control power in industrial electronics. It provides rugged operation across a wide thermal range and is suitable for systems requiring substantial voltage blocking and moderate power dissipation. The device is intended for applications demanding reliable switching at elevated temperatures while conforming to RoHS material restrictions.

Features and Benefits:

• 1200 V blocking capability enables high-voltage switching applications
• 105 W power dissipation allows sustained thermal loading
• 7-transistor configuration increases switching density per package
• 20 V gate-emitter rating supports robust gate-drive margins
• VCE(sat) 2.25 V typical reduces conduction losses during on-state
• Operates to 150 °C for high-temperature environments

Applications

• Suitable for industrial motor inverter stages
• Ideal for medium-power renewable energy converters
• Used with power supplies requiring high-voltage switching
• Can be used for traction auxiliary converters
• Appropriate for induction heating power stages

What temperature range can it reliably operate within?

It functions across a minimum of −40 °C up to a maximum of 150 °C.

What is the maximum collector-emitter voltage capability?

The device supports up to 1200 V between collector and emitter.

How much power can the module dissipate under load?

It can dissipate a maximum of 105 W of power.

What gate drive voltage limit must be observed?

The gate-emitter voltage must not exceed 20 V.

Is the module compliant with common environmental standards?

It meets RoHS requirements for restricted substances.