Infineon FS100R12KE3BOSA1 IGBT Module, 140 A 1200 V
- RS-stocknr.:
- 244-5861
- Fabrikantnummer:
- FS100R12KE3BOSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 218,42
(excl. BTW)
€ 264,29
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 218,42 |
| 2 - 2 | € 214,04 |
| 3 + | € 192,66 |
*prijsindicatie
- RS-stocknr.:
- 244-5861
- Fabrikantnummer:
- FS100R12KE3BOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 140 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation | 480 W | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 140 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation 480 W | ||
The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 480 W, maximum gate threshold voltage is 6.5 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Maximum collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA
Gate-emitter peak voltage + /- 20 V
Maximum collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA
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