onsemi FGA20N120FTDTU IGBT, 40 A 1200 V, 3-Pin TO-3PN, Through Hole

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STMicroelectronics STGWT20V60DF IGBT, 40 A 600 V, 3-Pin TO-3P, Through Hole
RS-stocknr.
791-7668

Elk (in een pakket van 5)

€ 2,792

(excl. BTW)

€ 3,378

(incl. BTW)

RS-stocknr.:
671-5391
Fabrikantnummer:
FGA20N120FTDTU
Fabrikant:
onsemi
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onsemi

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±25V

Package Type

TO-3PN

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.8 x 5 x 18.9mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Discrete IGBTs, 1000V and over, Fairchild Semiconductor



IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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