Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Maximum Continuous Collector Current	60 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±25V
	Maximum Power Dissipation	339 W
	Package Type	TO-3PN
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	15.8 x 5 x 20.1mm
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C

	Alles selecteren
	Merk onsemi
	Maximum Continuous Collector Current 60 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±25V
	Maximum Power Dissipation 339 W
	Package Type TO-3PN
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Transistor Configuration Single
	Dimensions 15.8 x 5 x 20.1mm
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

onsemi FGA30N120FTDTU IGBT, 60 A 1200 V, 3-Pin TO-3PN, Through Hole

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

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