onsemi FGA60N65SMD, Type N-Channel IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole
- RS-stocknr.:
- 864-8795
- Fabrikantnummer:
- FGA60N65SMD
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
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€ 5,80
(excl. BTW)
€ 7,02
(incl. BTW)
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- 137 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 29 stuk(s) vanaf 08 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 5,80 |
| 10 + | € 4,99 |
*prijsindicatie
- RS-stocknr.:
- 864-8795
- Fabrikantnummer:
- FGA60N65SMD
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current Ic | 120A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 600W | |
| Package Type | TO-3PN | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 140ns | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Maximum Operating Temperature | 175°C | |
| Series | Field Stop | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current Ic 120A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 600W | ||
Package Type TO-3PN | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 140ns | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Maximum Operating Temperature 175°C | ||
Series Field Stop | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.