onsemi FGH15T120SMD-F155 IGBT, 30 A 1200 V, 3-Pin TO-247, Surface Mount
- RS-stocknr.:
- 864-8833
- Fabrikantnummer:
- FGH15T120SMD-F155
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 11,02
(excl. BTW)
€ 13,34
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 5,51 | € 11,02 |
| 10 + | € 4,68 | € 9,36 |
*prijsindicatie
- RS-stocknr.:
- 864-8833
- Fabrikantnummer:
- FGH15T120SMD-F155
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 333 W | |
| Package Type | TO-247 | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.87 x 4.82 x 20.82mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 333 W | ||
Package Type TO-247 | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.87 x 4.82 x 20.82mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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