Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Maximum Continuous Collector Current	30 A
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	±25V
	Maximum Power Dissipation	333 W
	Package Type	TO-247
	Mounting Type	Surface Mount
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	15.87 x 4.82 x 20.82mm
	Minimum Operating Temperature	-55 °C
	Maximum Operating Temperature	+175 °C

	Alles selecteren
	Merk onsemi
	Maximum Continuous Collector Current 30 A
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage ±25V
	Maximum Power Dissipation 333 W
	Package Type TO-247
	Mounting Type Surface Mount
	Channel Type N
	Pin Count 3
	Transistor Configuration Single
	Dimensions 15.87 x 4.82 x 20.82mm
	Minimum Operating Temperature -55 °C
	Maximum Operating Temperature +175 °C

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

onsemi FGH15T120SMD-F155 IGBT, 30 A 1200 V, 3-Pin TO-247, Surface Mount

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

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