STMicroelectronics SCT0 Type N-Channel MOSFET, 100 A, 1200 V, 7-Pin H2PAK-7 SCT020H120G3AG
- RS-stocknr.:
- 330-232
- Fabrikantnummer:
- SCT020H120G3AG
- Fabrikant:
- STMicroelectronics
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€ 25,26
(excl. BTW)
€ 30,56
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 25,26 |
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| 100 + | € 20,96 |
*prijsindicatie
- RS-stocknr.:
- 330-232
- Fabrikantnummer:
- SCT020H120G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-7 | |
| Series | SCT0 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 18.5mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 121nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 555W | |
| Forward Voltage Vf | 3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-7 | ||
Series SCT0 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 18.5mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 121nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 555W | ||
Forward Voltage Vf 3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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