Infineon OptiMOS 5 N-Channel MOSFET, 700 A, 30 V Enhancement, 9-Pin PG-WHTFN-9 IQDH35N03LM5CGSCATMA1
- RS-stocknr.:
- 348-875
- Fabrikantnummer:
- IQDH35N03LM5CGSCATMA1
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 348-875
- Fabrikantnummer:
- IQDH35N03LM5CGSCATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Series | OptiMOS 5 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 700 A | |
| Maximum Drain Source Voltage (Vds) | 30 V | |
| Channel Mode | Enhancement | |
| Pin Count | 9 | |
| Package Type | PG-WHTFN-9 | |
| Automotive Standard | No | |
| Maximum Drain Source Resistance (Rds) | 0.35 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 278 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Series OptiMOS 5 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 700 A | ||
Maximum Drain Source Voltage (Vds) 30 V | ||
Channel Mode Enhancement | ||
Pin Count 9 | ||
Package Type PG-WHTFN-9 | ||
Automotive Standard No | ||
Maximum Drain Source Resistance (Rds) 0.35 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 278 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
- Land van herkomst:
- MY
The Infineon MOSFET comes with a low RDS(on) of 0.35 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.
Minimized conduction losses
Fast switching
Reduced voltage overshoot
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