Microchip 2N6660 N-Channel Single MOSFETs, 410 mA, 60 V Enhancement, 3-Pin TO-39 2N6660

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RS-stocknr.:
649-369
Fabrikantnummer:
2N6660
Fabrikant:
Microchip
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Merk

Microchip

Channel Type

N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

410mA

Maximum Drain Source Voltage Vds

60V

Series

2N6660

Package Type

TO-39

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

6.25W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

Lead (Pb)-free/RoHS

Automotive Standard

No

Land van herkomst:
TH
The Microchip N-Channel, Enhancement-Mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This com-binational produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low Ciss and fast switching speeds

Excellent thermal stability

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