Microchip 2N6660 Type N-Channel Single MOSFETs, 410 mA, 60 V Enhancement, 3-Pin TO-39 2N6660
- RS-stocknr.:
- 649-369
- Fabrikantnummer:
- 2N6660
- Fabrikant:
- Microchip
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€ 20,27
(excl. BTW)
€ 24,53
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 20,27 |
| 5 + | € 19,66 |
*prijsindicatie
- RS-stocknr.:
- 649-369
- Fabrikantnummer:
- 2N6660
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 410mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N6660 | |
| Package Type | TO-39 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 6.25W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 410mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N6660 | ||
Package Type TO-39 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 6.25W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- TH
The Microchip N-Channel, Enhancement-Mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This com-binational produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low Ciss and fast switching speeds
Excellent thermal stability
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