Vishay SIR N channel-Channel Single MOSFETs, 203 A, 100 V Enhancement Mode, 8-Pin P SIRS5100EPW-T1-RE3
- RS-stocknr.:
- 829-344
- Fabrikantnummer:
- SIRS5100EPW-T1-RE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 3,34
(excl. BTW)
€ 4,04
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 11 augustus 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 3,34 |
| 10 - 99 | € 2,17 |
| 100 - 499 | € 1,52 |
| 500 - 999 | € 1,28 |
| 1000 + | € 1,20 |
*prijsindicatie
- RS-stocknr.:
- 829-344
- Fabrikantnummer:
- SIRS5100EPW-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 203A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | P | |
| Series | SIR | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0027Ω | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 205W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.15mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 6.15mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 203A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type P | ||
Series SIR | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0027Ω | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 205W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 5.15mm | ||
Standards/Approvals RoHS Compliant | ||
Length 6.15mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
The Vishay power MOSFET delivers high performance for applications demanding efficient switching. With its Advanced design, it enables significant reductions in power loss and enhanced overall thermal management.
Provides a drain-source voltage rating of 100 V, ensuring reliable operation
Achieves a low on-state resistance, which minimises power loss during conduction
Offers a continuous drain current of up to 203 A, suitable for high-power demands
Features a Pb-free and halogen-free construction for compliance with environmental regulations
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