Vishay SISS N channel-Channel Single MOSFETs, 14.2 A, 100 V Enhancement Mode, 8-Pin P SISS110DN-T1-GE3
- RS-stocknr.:
- 829-345
- Fabrikantnummer:
- SISS110DN-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
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€ 1,03
(excl. BTW)
€ 1,25
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 11 augustus 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 1,03 |
| 10 - 99 | € 0,64 |
| 100 - 499 | € 0,42 |
| 500 - 999 | € 0,32 |
| 1000 + | € 0,29 |
*prijsindicatie
- RS-stocknr.:
- 829-345
- Fabrikantnummer:
- SISS110DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 14.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | P | |
| Series | SISS | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.054Ω | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 24W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.30mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 1.04mm | |
| Length | 3.30mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 14.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type P | ||
Series SISS | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.054Ω | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 24W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.30mm | ||
Standards/Approvals RoHS Compliant | ||
Height 1.04mm | ||
Length 3.30mm | ||
Automotive Standard No | ||
- Land van herkomst:
- IL
The Vishay N-Channel MOSFET delivers efficient power management solutions with excellent conduction capabilities. Designed for demanding applications, it offers superior switching and thermal performance.
Features TrenchFET Gen IV technology for superior efficiency and performance
Guaranteed 100% RDS(on) and UIS tested for reliability in operation
Continuous drain current rating of 11 A ensures robust delivery
Optimised for low RDS(on) values, enhancing thermal performance
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