Vishay SISS N channel-Channel Single MOSFETs, 33.7 A, 80 V Enhancement Mode, 8-Pin P SISS128LDN-T1-UE3
- RS-stocknr.:
- 829-346
- Fabrikantnummer:
- SISS128LDN-T1-UE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
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€ 1,63
(excl. BTW)
€ 1,97
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending vanaf 11 augustus 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 1,63 |
| 10 - 99 | € 1,03 |
| 100 - 499 | € 0,67 |
| 500 - 999 | € 0,53 |
| 1000 + | € 0,47 |
*prijsindicatie
- RS-stocknr.:
- 829-346
- Fabrikantnummer:
- SISS128LDN-T1-UE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 33.7A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | P | |
| Series | SISS | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0156Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 39W | |
| Typical Gate Charge Qg @ Vgs | 13.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.30mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 3.30mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 33.7A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type P | ||
Series SISS | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0156Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 39W | ||
Typical Gate Charge Qg @ Vgs 13.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 3.30mm | ||
Standards/Approvals RoHS Compliant | ||
Length 3.30mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
- Land van herkomst:
- IL
The Vishay high-performance N-Channel MOSFET designed for efficient power management in a Compact package, ensuring reliable operation across various demanding applications.
TrenchFET Gen IV technology enables improved efficiency and thermal performance
Low RDS(on) values, optimising conduction losses during operation
Tested for high reliability with 100% R and UIS stressed units
Robust specifications with a 80V drain-source voltage rating and a maximum current of 33.7A
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