Microchip Half Bridge mSiC N-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330AM07CD3NG
- RS-stocknr.:
- 854-512
- Fabrikantnummer:
- MSCSM330AM07CD3NG
- Fabrikant:
- Microchip
Afbeelding representeert productcategorie
Subtotaal (1 eenheid)*
€ 898,88
(excl. BTW)
€ 1.087,64
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 29 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 898,88 |
*prijsindicatie
- RS-stocknr.:
- 854-512
- Fabrikantnummer:
- MSCSM330AM07CD3NG
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 295A | |
| Maximum Drain Source Voltage Vds | 3300V | |
| Series | mSiC | |
| Mount Type | Heatsink | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 1918W | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 295A | ||
Maximum Drain Source Voltage Vds 3300V | ||
Series mSiC | ||
Mount Type Heatsink | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 1918W | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power module excels in high-performance applications, delivering exceptional voltage handling and continuous drain current capabilities for demanding environments.
Robust thermal reliability ensures optimal performance at elevated temperatures
Integrated Schottky diode provides zero reverse recovery, enhancing switching behaviour
Designed with a Kelvin source configuration for simplified gate driving
Compact, isolated package allows direct mounting to heatsinks
Gerelateerde Links
- Microchip Half Bridge mSiC N channel-Channel SiC Power Module 3300 V Enhancement Mode MSCSM330DUM07D3NG
- Microchip Half Bridge mSiC N channel-Channel SiC Power Module 3300 V Enhancement Mode MSCSM330AM07D3NG
- Microchip Half Bridge mSiC N channel-Channel SiC Power Module 3300 V Enhancement Mode MSCSM330DUM07CD3NG
- Microchip Half Bridge mSiC N channel-Channel SiC Power Module 3300 V Enhancement Mode MSCSM330AM15D3NG
- Microchip Half Bridge mSiC N channel-Channel SiC Power Module 3300 V Enhancement Mode MSCSM330AM15CD3NG
- ROHM 4th Generation SiC MOSFET Half Bridge Evaluation Board SiC MOSFET for SiC MOSFET for Motor Drives
- Microchip mSiC N channel-Channel MOSFET 3300 V, 4-Pin TO-247-4L MSC080SMA330B4N
- ROHM Half Bridge BSM Type N-Channel SiC Power Module 1200 V Enhancement, 4-Pin BSM120D12P2C005
