Fabrikantnummer

Vishay Type N-Channel Power MOSFET, 3 A, 500 V Enhancement, 3-Pin TO-252 SIHD3N50D-GE3

RS-stocknr.:: 145-1656
Fabrikantnummer:: SIHD3N50D-GE3
Fabrikant:: Vishay

Vishay Type N-Channel Power MOSFET, 3 A, 500 V Enhancement, 3-Pin TO-252 SIHD3N50D-GE3

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RS-stocknr.:: 145-1656
Fabrikantnummer:: SIHD3N50D-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.2Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	104W
	Maximum Gate Source Voltage Vgs	±30 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Standards/Approvals	No
	Height	2.38mm
	Width	6.22 mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.2Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 104W
	Maximum Gate Source Voltage Vgs ±30 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Standards/Approvals No
	Height 2.38mm
	Width 6.22 mm
	Automotive Standard No

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