Vishay E Type N-Channel Power MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252 SIHD11N80AE-T1-GE3

RS-stocknr.:: 228-2849
Fabrikantnummer:: SIHD11N80AE-T1-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252 SIHD11N80AE-T1-GE3

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€ 11,40

(excl. BTW)

€ 13,80

(incl. BTW)

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RS-stocknr.:: 228-2849
Fabrikantnummer:: SIHD11N80AE-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	850V
	Series	E
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	450mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	28nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	78W
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 850V
	Series E
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 450mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 28nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 78W
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHD11N80AE-T1-GE3

Vishay Series E Power MOSFET, 850V Maximum Drain Source Voltage, 8A Maximum Continuous Drain Current - SIHD11N80AE-T1-GE3

This power MOSFET is a high-voltage N-channel switching transistor intended for surface-mount applications in industrial power designs. It operates as an enhancement-mode device and is suited to circuits requiring high drain-to-source voltage capability and moderate continuous current handling within elevated temperature environments.

Features and Benefits:

• 850V maximum drain-to-source voltage enables high-voltage switching applications • 8A continuous drain current supports moderate load-driving requirements • 450mΩ Rds(on) reduces conduction losses in high-voltage circuits • 78W maximum power dissipation permits higher thermal headroom • 30V gate tolerance allows robust gate-drive margins • 28nC typical gate charge aids predictable switching performance

Applications

• Suitable for high-voltage power supplies and converters • Ideal for industrial motor-drive front-ends • Used for electronic ballast and lighting controllers • Can be used for energy-management and power-conditioning modules • Suitable for mid-power inverter stages in automation systems

What mounting format does it use for PCB assembly?

It is supplied in a TO-252 surface-mount package with three pins for PCB soldering.

What temperature range can it withstand during operation?

It is specified for operation from -55°C up to a maximum of 150°C.

How does its gate characteristic affect switching design?

The typical gate charge of 28nC at the rated gate drive informs drive current and switching-loss estimates for gate driver selection.

What is the maximum continuous power the device can dissipate?

The device can dissipate up to 78W under appropriate thermal-management conditions.