Vishay Siliconix SiS110DN Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiS110DN-T1-GE3

RS-stocknr.:: 178-3962
Fabrikantnummer:: SiS110DN-T1-GE3
Fabrikant:: Vishay Siliconix

Vishay Siliconix SiS110DN Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiS110DN-T1-GE3

Subtotaal (1 verpakking van 25 eenheden)*

€ 16,50

(excl. BTW)

€ 20,00

(incl. BTW)

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Verzending vanaf 26 oktober 2026

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Aantal stuks	Per stuk	Per verpakking*
25 +	€ 0,66	€ 16,50

*prijsindicatie

RS-stocknr.:: 178-3962
Fabrikantnummer:: SiS110DN-T1-GE3
Fabrikant:: Vishay Siliconix

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay Siliconix
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	14.2A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PowerPAK 1212
	Series	SiS110DN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	8.5nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	24W
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	3.15mm
	Width	3.15mm
	Height	1.07mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay Siliconix
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 14.2A
	Maximum Drain Source Voltage Vds 100V
	Package Type PowerPAK 1212
	Series SiS110DN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 8.5nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 24W
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 3.15mm
	Width 3.15mm
	Height 1.07mm
	Automotive Standard No

Datasheet

Vrijgesteld

Land van herkomst:: CN

Vishay Siliconix SiS110DN Series MOSFET, 100V Drain Source Voltage, 14.2A Continuous Drain Current - SiS110DN-T1-GE3

This n-channel MOSFET is a surface-mount switching transistor designed for power conversion and control applications in industrial systems. It operates as an enhancement-mode device capable of handling moderate to high voltages and currents, providing efficient switching in Compact surface-mount assemblies.

Features and Benefits:

• 100V drain-source rating enables high-voltage switching applications • 14.2A continuous drain current supports substantial load currents • 70mΩ Rds(on) minimises conduction losses during operation • 8.5nC gate charge reduces switching energy and drive requirements • 24W power dissipation manages thermal load in confined layouts • 150°C maximum junction temperature allows elevated operating conditions

Applications

• Suitable for DC-DC converter switching stages in automation equipment • Ideal for motor-drive half-bridge circuits in factory systems • Used for power management in industrial control units • Can be used for load switching in electrical distribution modules

What mounting style does it require for assembly?

It is supplied in a Compact PowerPAK 1212 surface-mount package designed for soldered PCB assembly and low-profile board layouts.

How wide a temperature range can it tolerate in service?

It is rated for operation from -55°C ambient to a 150°C maximum junction temperature, permitting use in environments with substantial thermal variation.

What gate voltage limits should designers observe?

The device permits gate-source voltages up to 20V

designs should ensure the gate drive stays within this constraint to protect the gate oxide.

How many pins does the package present for circuit integration?

The package includes eight pins to accommodate drain, source and gate connections and to aid thermal and electrical routing on the PCB.

Is this part specified for automotive use?

It is not designated to automotive standards and should not be chosen where automotive-grade qualification is mandatory.