Vishay Siliconix TrenchFET N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 SiSS02DN-T1-GE3

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RS-stocknr.:
178-3899
Fabrikantnummer:
SiSS02DN-T1-GE3
Fabrikant:
Vishay Siliconix
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Merk

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Series

TrenchFET

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Width

3.15mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.15mm

Transistor Material

Si

Height

1.07mm

Forward Diode Voltage

1.1V

Minimum Operating Temperature

-55 °C

N.v.t.

Land van herkomst:
CN
FEATURES
TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally
enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
APPLICATIONS
Synchronous rectification
Synchronous buck converter
High power density DC/DC
OR-ing
Load switching

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