Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 19.8 A, 20 V Enhancement, 8-Pin SO-8

RS-stocknr.:: 180-7285
Fabrikantnummer:: SI4204DY-T1-GE3
Fabrikant:: Vishay

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 19.8 A, 20 V Enhancement, 8-Pin SO-8

Subtotaal (1 rol van 2500 eenheden)*

€ 2.200,00

(excl. BTW)

€ 2.650,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Tijdelijk niet op voorraad

Verzending vanaf 24 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
2500 +	€ 0,88	€ 2.200,00

*prijsindicatie

RS-stocknr.:: 180-7285
Fabrikantnummer:: SI4204DY-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19.8A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.006Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	30nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	3.25W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Width	1.65 mm
	Height	1mm
	Length	3.05mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19.8A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.006Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 30nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 3.25W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Width 1.65 mm
	Height 1mm
	Length 3.05mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount dual N-channel MOSFET is a new age product with a drain-source voltage of 20V. It also has drain-source resistance of 4.6mohm at a gate-source voltage of 10V. It has continuous drain current of 19.8A. The MOSFET has a maximum power rating of 3.25W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC Converter

• Fixed Telecommunication

• Notebook PC

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested