Vishay TrenchFET N-Channel MOSFET, 18.7 A, 100 V Enhancement, 8-Pin SO-8 Si4090BDY-T1-GE3
- RS-stocknr.:
- 228-2820
- Fabrikantnummer:
- Si4090BDY-T1-GE3
- Fabrikant:
- Vishay
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 228-2820
- Fabrikantnummer:
- Si4090BDY-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 46.5nC | |
| Maximum Power Dissipation Pd | 7.4W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.75mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 46.5nC | ||
Maximum Power Dissipation Pd 7.4W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.75mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.
100 % Rg and UIS tested
Gerelateerde Links
- Vishay TrenchFET N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 Si4090BDY-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRA00DP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRA06DP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SIRA88DP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 25 V Enhancement, 8-Pin SO-8 SIRA20BDP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 Si4056ADY-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SI4447ADY-T1-GE3