Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-247AC SIHG11N80AEF-GE3

RS-stocknr.:: 653-136
Fabrikantnummer:: SIHG11N80AEF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-247AC SIHG11N80AEF-GE3

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 tube van 25 eenheden)*

€ 33,675

(excl. BTW)

€ 40,75

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

500 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
25 - 100	€ 1,347	€ 33,68
125 +	€ 1,32	€ 33,00

*prijsindicatie

RS-stocknr.:: 653-136
Fabrikantnummer:: SIHG11N80AEF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-247AC
	Series	EF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.483Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	41nC
	Maximum Power Dissipation Pd	78W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	20.70mm
	Length	16.25mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-247AC
	Series EF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.483Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 41nC
	Maximum Power Dissipation Pd 78W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 20.70mm
	Length 16.25mm
	Automotive Standard No

Datasheet - SIHG11N80AEF-GE3

Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 78W Power Dissipation - SIHG11N80AEF-GE3

This power MOSFET is a high-voltage, N-channel switching device designed for power-electronic duties where robust voltage handling and through-hole mounting are required. It operates as an enhancement-mode transistor suitable for applications needing a high drain-to-source breakdown and conventional gate-drive arrangements. The package supports wire-lead assembly and is intended for industrial and electronic system integration.

Features and Benefits:

• 800V drain rating enables high-voltage switching applications • 8A continuous drain current supports moderate load throughput • 0.483Ω Rds(on) minimises conduction losses under load • 41nC gate charge reduces switching energy and drive requirements • 78W power dissipation allows sustained thermal loading • 30V maximum gate drive preserves gate insulation integrity

Applications

• Suitable for high-voltage power supplies and converters • Ideal for motor-drive inverter stages in industrial controls • Used for switch-mode power electronics and converters • Can be used for medium-power PFC and boost regulator designs

What temperature range can it reliably operate within?

It is specified to function between -55°C and 150°C, accommodating cold-start and elevated-temperature environments.

How is the device mounted in typical assemblies?

It is supplied in a through-hole TO-247AC package with three pins for secure board attachment and heat-sink mounting.

What gate-drive constraints should designers observe?

The gate-to-source voltage must not exceed 30V to avoid damaging the gate dielectric.

Are there any handling considerations for thermal management?

The 78W dissipation figure requires appropriate heat-sinking and thermal-interface practices to maintain junction temperatures within specified limits.