Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET, 48 A, 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- RS-stocknr.:
- 200-6853
- Fabrikantnummer:
- SiZ240DT-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 30,90
(excl. BTW)
€ 37,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 07 juni 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 1,236 | € 30,90 |
| 50 - 100 | € 1,038 | € 25,95 |
| 125 - 225 | € 0,99 | € 24,75 |
| 250 - 600 | € 0,927 | € 23,18 |
| 625 + | € 0,866 | € 21,65 |
*prijsindicatie
- RS-stocknr.:
- 200-6853
- Fabrikantnummer:
- SiZ240DT-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAIR 3 x 3S | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00805Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 15.2nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAIR 3 x 3S | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00805Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 15.2nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay SiZ240DT-T1-GE3 is a dual N-channel 40V (D-S) MOSFETs.
TrenchFET Gen IV power MOSFETs
Integrated MOSFET half-bridge power stage
100 % Rg and UIS tested
Optimized Qgs/Qgs ratio improves switching characteristics
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