STMicroelectronics SCTH35 N-Channel MOSFET, 45 A, 650 V Enhancement, 7-Pin H2PAK-7 SCTH35N65G2V-7
- RS-stocknr.:
- 201-0891
- Fabrikantnummer:
- SCTH35N65G2V-7
- Fabrikant:
- STMicroelectronics
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 201-0891
- Fabrikantnummer:
- SCTH35N65G2V-7
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Series | SCTH35 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 45 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Channel Mode | Enhancement | |
| Pin Count | 7 | |
| Package Type | H2PAK-7 | |
| Maximum Drain Source Resistance (Rds) | 0.055 Ω | |
| Mount Type | Surface | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Series SCTH35 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 45 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Channel Mode Enhancement | ||
Pin Count 7 | ||
Package Type H2PAK-7 | ||
Maximum Drain Source Resistance (Rds) 0.055 Ω | ||
Mount Type Surface | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 55m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitance
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