Vishay SiHB17N80E Type N-Channel MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80E-GE3
- RS-stocknr.:
- 204-7227
- Fabrikantnummer:
- SIHB17N80E-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 26,70
(excl. BTW)
€ 32,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 19 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 5,34 | € 26,70 |
| 25 - 45 | € 4,808 | € 24,04 |
| 50 - 120 | € 4,272 | € 21,36 |
| 125 - 245 | € 4,108 | € 20,54 |
| 250 + | € 4,006 | € 20,03 |
*prijsindicatie
- RS-stocknr.:
- 204-7227
- Fabrikantnummer:
- SIHB17N80E-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | SiHB17N80E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 290mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 122nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Height | 15.88mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series SiHB17N80E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 290mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 122nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Height 15.88mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET has a low figure-of-merit (FOM) Ron x Qg and a low input capacitance (Ciss).
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Gerelateerde Links
- Vishay SiHB17N80E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB11N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB24N80AE-GE3
- Vishay SIHB21N80AE N channel-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T5-GE3