Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin
- RS-stocknr.:
- 214-9061
- Fabrikantnummer:
- IPG20N06S4L11AATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 2.620,00
(excl. BTW)
€ 3.170,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 10.000 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,524 | € 2.620,00 |
*prijsindicatie
- RS-stocknr.:
- 214-9061
- Fabrikantnummer:
- IPG20N06S4L11AATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual N Channel Logic Level Enhancement Mode | |
| Width | 5.9 mm | |
| Standards/Approvals | RoHS, MSL1, AEC Q101 | |
| Length | 5.15mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual N Channel Logic Level Enhancement Mode | ||
Width 5.9 mm | ||
Standards/Approvals RoHS, MSL1, AEC Q101 | ||
Length 5.15mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Logic Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
The product is AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
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