Infineon IPD Type P-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA2
- RS-stocknr.:
- 217-2519
- Fabrikantnummer:
- IPD50P04P413ATMA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 19,26
(excl. BTW)
€ 23,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 6.880 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 20 | € 0,963 | € 19,26 |
| 40 - 80 | € 0,915 | € 18,30 |
| 100 - 180 | € 0,877 | € 17,54 |
| 200 - 480 | € 0,838 | € 16,76 |
| 500 + | € 0,78 | € 15,60 |
*prijsindicatie
- RS-stocknr.:
- 217-2519
- Fabrikantnummer:
- IPD50P04P413ATMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 58W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | -1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 58W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf -1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon -40V, P-Ch, 12.6 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-P2.
P-channel - Normal Level - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (RoHS compliant)
100% Avalanche tested
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