Vishay EF Type N-Channel Power MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AEF-GE3

RS-stocknr.:: 225-9914
Fabrikantnummer:: SIHG15N80AEF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AEF-GE3

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€ 21,925

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125 - 245	€ 3,076	€ 15,38
250 - 495	€ 2,90	€ 14,50
500 +	€ 2,68	€ 13,40

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RS-stocknr.:: 225-9914
Fabrikantnummer:: SIHG15N80AEF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-247AC
	Series	EF
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	350mΩ
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	156W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	53nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	10.41mm
	Width	2.39mm
	Standards/Approvals	RoHS
	Length	6.73mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-247AC
	Series EF
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 350mΩ
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 156W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 53nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 10.41mm
	Width 2.39mm
	Standards/Approvals RoHS
	Length 6.73mm
	Automotive Standard No

Datasheet - SIHG15N80AEF-GE3

Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 13A Drain Current - SIHG15N80AEF-GE3

This power MOSFET is a silicon N‑channel transistor designed for high‑voltage switching and power conversion in industrial environments. It is intended for surface‑mounted assemblies requiring robust drain‑to‑source voltage handling and elevated operating temperatures, making it suitable for demanding electrical and mechanical control systems.

Features and Benefits:

• 800V rating enables high‑voltage switching applications • 13A continuous current supports substantial load drive • 350mΩ Rds(on) reduces conduction losses in power paths • 53nC typical gate charge allows predictable switching control • 156W power dissipation permits sustained thermal loading • 30V maximum gate stress protects gate‑drive circuitry

Applications

• Suitable for high‑voltage inverters in automation systems • Ideal for power supplies in industrial control equipment • Used for motor‑drive switching in electrical assemblies • Can be used for snubber and clamp networks in power electronics

What temperature range can it operate within?

It functions across a broad span from -55°C up to 150°C, enabling use in varied thermal environments.

How is it packaged for mounting on assemblies?

It comes in a TO‑247AC enclosure configured for surface‑mount installation with three connection pins.

What gate drive considerations are relevant for switching?

The gate must be driven within ±30V limits and sized to handle a typical 53nC charge for controlled switching transitions.

How does the device manage power under load?

It can dissipate up to 156W when properly cooled, allowing continuous operation at rated current with adequate thermal management.