Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-247AC

RS-stocknr.:: 653-138
Fabrikantnummer:: SIHG11N80AEF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-247AC

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RS-stocknr.:: 653-138
Fabrikantnummer:: SIHG11N80AEF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	800V
	Series	EF
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.483Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	41nC
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	78W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	20.70mm
	Standards/Approvals	RoHS
	Length	16.25mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 800V
	Series EF
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.483Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 41nC
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 78W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 20.70mm
	Standards/Approvals RoHS
	Length 16.25mm
	Automotive Standard No

Datasheet - SIHG11N80AEF-GE3

Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 78W Power Dissipation - SIHG11N80AEF-GE3

This power MOSFET is a high-voltage N-channel switch designed for use in power conversion and switching environments. It serves as an enhancement-mode device for controlling high-voltage loads where through-hole mounting is preferred, and it is suitable for operation across a wide ambient temperature range.

Features and Benefits:

• 800V maximum drain-source voltage for high-voltage switching capability
• 0.483Ω Rds(on) limiting conduction losses at rated conditions
• 8A continuous drain current supporting substantial load currents
• 78W maximum power dissipation enabling high-power handling
• 41nC typical gate charge for predictable gate-drive energy
• -55°C to 150°C operating range for extended temperature resilience

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive switching stages
• Used with energy-storage and inverter systems
• Can be used for traction auxiliary power electronics
• Applied in through-hole prototyping and serviceable equipment

What gate-voltage limits must be observed for safe operation?

Gate-source voltage must not exceed 30V to avoid gate-oxide stress and ensure reliable switching.

How does the package affect mounting and thermal handling?

The TO-247AC through-hole package permits bolted heatsinking and straightforward chassis attachment for effective thermal management.

What forward conduction behaviour can be expected when forward-biased?

Forward conduction exhibits a Vf of around 1.2V, which informs diode conduction losses during body-diode or synchronous-rectification events.

Is this device suitable for automotive-grade applications?

It is not certified to automotive standards and should not be specified where automotive approvals are mandatory.