Vishay TrenchFET N-Channel MOSFET, 67.4 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8SH SiSH536DN-T1-GE3
- RS-stocknr.:
- 228-2929
- Fabrikantnummer:
- SiSH536DN-T1-GE3
- Fabrikant:
- Vishay
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 228-2929
- Fabrikantnummer:
- SiSH536DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Series | TrenchFET | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 67.4 A | |
| Maximum Drain Source Voltage (Vds) | 30 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | PowerPAK 1212-8SH | |
| Automotive Standard | No | |
| Maximum Drain Source Resistance (Rds) | 3.25 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 16 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 26.5 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 16.6 nC | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Series TrenchFET | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 67.4 A | ||
Maximum Drain Source Voltage (Vds) 30 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type PowerPAK 1212-8SH | ||
Automotive Standard No | ||
Maximum Drain Source Resistance (Rds) 3.25 mΩ | ||
Maximum Gate Source Voltage (Vgs) 16 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 26.5 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 16.6 nC | ||
The Vishay N-Channel 30 V (D-S) MOSFET.
100 % Rg and UIS tested
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