STMicroelectronics STB37N60 Type N-Channel MOSFET, 12 A, 1200 V Enhancement, 3-Pin H2PAK

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RS-stocknr.:
233-3040
Fabrikantnummer:
STH12N120K5-2
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

1200V

Series

STB37N60

Package Type

H2PAK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

690mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

44.2nC

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Width

15.8 mm

Standards/Approvals

No

Length

10.4mm

Height

4.8mm

Automotive Standard

No

The STMicroelectronics very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Worldwide best FOM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

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