Vishay EF Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-263

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RS-stocknr.:
177-7628
Fabrikantnummer:
SIHB28N60EF-GE3
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

123mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.67mm

Width

9.65 mm

Height

4.83mm

Automotive Standard

No

Land van herkomst:
CN

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor


Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current

Low figure-of-merit (FOM)

Low input capacitance (Ciss)

Increased robustness due to low Reverse Recovery Charge

Ultra low gate charge (Qg)

MOSFET Transistors, Vishay Semiconductor


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